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UT54ACTS220 - Clock and Wait-State Generation Circuit

UT54ACTS220_657614.PDF Datasheet


 Full text search : Clock and Wait-State Generation Circuit


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PART Description Maker
IS61NVF25636A IS61NVF25636A-6.5B2 IS61NVF25636A-6. 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM
ISSI[Integrated Silicon Solution, Inc]
IS61NLP51218A IS61NLP51218A-200TQLI IS61NLP51218A- 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
   256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM
Integrated Silicon Solu...
IS61NVP12836A IS61NVP12836A-200B2 IS61NVP12836A-20 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM
ISSI[Integrated Silicon Solution, Inc]
IS61NVVP51236-200BI IS61NVVP51236-250B IS61NVVP512 256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 3 ns, PBGA119
256K x 72 and 512K x 36, 18Mb PIPELINE (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 2.6 ns, PBGA119
Integrated Silicon Solution, Inc.
BR25S128F-WE2 BR25S-E BR25S640F-WE2 High Reliability Series Serial EEPROMs
High speed clock action up to 20MHz(Max.), Wait function by HOLDB terminal.
   High Reliability Series Serial EEPROMs
   High speed clock action up to 20MHz(Max.), Wait function by HOLDB terminal.
Rohm
5962R9653101QXC 5962R9652401QXC 5962R9654201QCA 59 RadHard MSI: SMD. Quadruple 2-input NOR gates. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NOR gates. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Clock & wait-state generation circuit. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class V, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Hex inverter schmit trigger. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Hex noninverting buffers. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Dual J-K flip-flop. Class V, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND schmitt trigger. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Clock & wait-state generation circuit. Class Q, QML. Lead finish solder. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Clock & wait-state generation circuit. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish optional. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class V, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NAND gates. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
RadHard MSI: SMD. Quadruple 2-input NOR gates. Class Q, QML. Lead finish gold. Total dose 1E5 rads(Si).
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